View STW55NM50N_3371647.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

july 2008 rev 2 1/12 12 STW55NM50N n-channel 500 v, 0.040 ? , 54 a, mdmesh? ii power mosfet to-247 features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of device s implements second generation mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d STW55NM50N 550 v <0.054 ? 54 a 1 2 3 to-247 table 1. device summary order code marking package packaging STW55NM50N 55nm50n to-247 tube www.st.com
contents STW55NM50N 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW55NM50N electrical ratings 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 54 a i d drain current (continuous) at t c = 100 c 35 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 216 a p tot total dissipation at t c = 25 c 350 w dv/dt (2) 2. i sd 54 a, di/dt 400 a/s, v dd =80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.36 c/w rthj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 15 a e as single pulse avalanche energy (starting tj=25 c, i d =i as , v dd =50 v) 1600 mj
electrical characteristics STW55NM50N 4/12 2 electrical characteristics (t case =25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v dv/dt (1) 1. characteristic value at turn off on inductive load drain source voltage slope v dd =400 v, i d = 54 a, v gs =10 v 30 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 27 a 0.040 0.054 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds =15 v , i d = 27 a 42 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 5800 370 30 pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0v, v ds = 0v to 400v 750 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 54 a, v gs = 10 v (see figure 15) 180 23 90 nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain 2 ?
STW55NM50N electrical characteristics 5/12 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =250 v, i d = 27 a r g =4.7 ? v gs = 10 v (see figure 14) 40 40 250 70 ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 54 216 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 54 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 54 a, di/dt = 100 a/s v dd = 100 v (see figure 16) 630 13 40 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 54 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 16) 750 16 42 ns c a
electrical characteristics STW55NM50N 6/12 2.1 electrical characteristics (c urves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on resistance
STW55NM50N electrical characteristics 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. normalized bv dss vs temperature figure 13. source-drain diode forward characteristics
test circuits STW55NM50N 8/12 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive wavefo rm figure 19. switching time waveform
STW55NM50N package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STW55NM50N 10/12 dim. mm. min. typ max . a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
STW55NM50N revision history 11/12 5 revision history table 9. document revision history date revision changes 22-apr-2008 1 first release 29-jul-2008 2 e as value has been updated in table 4
STW55NM50N 12/12 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STW55NM50N

	To Download STW55NM50N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .